Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge | Hugo Águas

Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Citation:: Aguas, H., L. Pereira, L. Raniero, E. Fortunato, and R. Martins. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 73-76.

Abstract:

n/a

Notes:

n/a