Write-erase and read paper memory transistor
- Citation:
- Martins, R., Barquinha Pereira Correia Goņalves Ferreira Fortunato P. L. N. "Write-erase and read paper memory transistor." Applied Physics Letters. 93 (2008).
Abstract:
We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and -14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm 2 V-1 s-1, respectively, and estimated charge retention times above 14 000 h. © 2008 American Institute of Physics.
Notes:
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