@article {Martins2008,
	title = {Write-erase and read paper memory transistor},
	journal = {Applied Physics Letters},
	volume = {93},
	number = {20},
	year = {2008},
	note = {<p>cited By 59</p>
},
	abstract = {<p>We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and -14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm 2 V-1 s-1, respectively, and estimated charge retention times above 14 000 h. {\textcopyright} 2008 American Institute of Physics.</p>
},
	doi = {10.1063/1.3030873},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-56849108223\&partnerID=40\&md5=71a735e4bcafc24b7081c29ed155f599},
	author = {Martins, R., Barquinha, P., Pereira, L., Correia, N., Gonalves, G., Ferreira, I., Fortunato, E.}
}
