@article {Fortunato2010,
	title = {Thin-film transistors based on p-type Cu2 O thin films produced at room temperature},
	journal = {Applied Physics Letters},
	volume = {96},
	number = {19},
	year = {2010},
	note = {<p>cited By 65</p>
},
	abstract = {<p>Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2{\texttimes} 102. {\textcopyright} 2010 American Institute of Physics.</p>
},
	doi = {10.1063/1.3428434},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-77952959792\&partnerID=40\&md5=40d08de402d16256882deed5b7cf32b6},
	author = {Fortunato, E.a , Figueiredo, V.a , Barquinha, P.a , Elamurugu, E.a , Barros, R.a b , Gonalves, G.a , Park, S.-H.K.c , Hwang, C.-}
}
