Thin-film transistors based on indium molybdenum oxide semiconductor layers sputtered at room temperature

Thin-film transistors based on indium molybdenum oxide semiconductor layers sputtered at room temperature

Citation:: Elangovan, E., Saji Parthiban Goncalves Barquinha Martins Fortunato K. J. S. "Thin-film transistors based on indium molybdenum oxide semiconductor layers sputtered at room temperature." IEEE Electron Device Letters. 32 (2011): 1391-1393.

Abstract:

Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence X-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are ∼88% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/Vċ s with an I ON/IOFF ratio of 2 × 103 and a threshold voltage of-1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer. © 2011 IEEE.

Notes:

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Rodrigo Martins

Professor @ Materials Science Department