@article {Elangovan20111391,
	title = {Thin-film transistors based on indium molybdenum oxide semiconductor layers sputtered at room temperature},
	journal = {IEEE Electron Device Letters},
	volume = {32},
	number = {10},
	year = {2011},
	note = {<p>cited By 6</p>
},
	pages = {1391-1393},
	abstract = {<p>Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence X-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are \~{}88\% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm2/Vc s with an I ON/IOFF ratio of 2 {\texttimes} 103 and a threshold voltage of-1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer. {\textcopyright} 2011 IEEE.</p>
},
	doi = {10.1109/LED.2011.2162310},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-80053567839\&partnerID=40\&md5=757a63fef4d59d482f249522a6fddbca},
	author = {Elangovan, E., Saji, K.J., Parthiban, S., Goncalves, G., Barquinha, P., Martins, R., Fortunato, E.}
}
