@article {Cabrita2001443,
	title = {Thin film position sensitive detectors based on pin amorphous silicon carbide structures},
	journal = {Applied Surface Science},
	volume = {184},
	number = {1-4},
	year = {2001},
	note = {<p>cited By 11</p>
},
	pages = {443-447},
	abstract = {<p>The performances of silicon carbide position sensitive detectors in relation to position color selection applications were presented. The devices were deposited on glass substrates coated with a transparent conductive oxide layer based on indium tin oxide film (ITO). On top of the ITP layer a pin structure produced by plasma enhanced chemical vapor deposition technique was deposited. The set of data achieved indicated that the undoped silicon carbide layers presented a low density of states, which explained high dark conductivity values obtained and the type of performances recorded on the PSD devices produced.</p>
},
	doi = {10.1016/S0169-4332(01)00532-3},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035852220\&partnerID=40\&md5=de19a97f8d94f6c3dc257ae7c8a44d48},
	author = {Cabrita, A., Figueiredo, J., Pereira, L., {\'A}guas, H., Silva, V., Brida, D., Ferreira, I., Fortunato, E., Martins, R.}
}
