@conference {Willeke1988320,
	title = {Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system},
	booktitle = {Conference Record of the IEEE Photovoltaic Specialists Conference},
	volume = {1},
	year = {1988},
	note = {<p>cited By 1</p>
},
	pages = {320-323},
	abstract = {<p>Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers (σ >= 10-1 (Ω-cm)-1) contain up to 20 at.\% C and 25 at.\% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C:O:H matrix.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0024180821\&partnerID=40\&md5=8add267f5f87cc851e3878917ba92090},
	author = {Willeke, G., Martins, R.}
}
