@article {Parthiban2009,
	title = {Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility},
	journal = {Applied Physics Letters},
	volume = {94},
	number = {21},
	year = {2009},
	note = {<p>cited By 18</p>
},
	abstract = {<p>Molybdenum doped (0-1 at. \%) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 {\textdegree}C by spray pyrolysis experimental technique. Films with mobility as high as \~{}149 cm2 /V s were obtained when annealed in vacuum at 550 {\textdegree}C, which also possess carrier concentration of \~{}1{\texttimes} 1020 cm-3 and resistivity as low as \~{}4.0{\texttimes} 10-4 cm. Further, both the average visible transmittance (500-800 nm) and the average NIR transmittance are \&gt;83\%. This clearly shows that the transmittance is extended well into the NIR region. {\textcopyright} 2009 American Institute of Physics.</p>
},
	doi = {10.1063/1.3142424},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-66549084470\&partnerID=40\&md5=872d35754efd291fbe162af9da170a26},
	author = {Parthiban, S.a , Ramamurthi, K.a , Elangovan, E.b , Martins, R.b , Fortunato, E.b}
}
