Spectroscopic ellipsometry study of Co-doped TiO 2 films
- Citation:
- Águas, H.a, Popovici Pereiraa Conde Branford Cohen Fortunato Martins N. b L. "Spectroscopic ellipsometry study of Co-doped TiO 2 films." Physica Status Solidi (A) Applications and Materials Science. 205 (2008): 880-883.
Abstract:
Co-doped TiO 2 films were characterized by spectroscopic ellipsometry to determine their thickness, deposition rate and optical properties as function of substance temperature and background gas composition. To fit the data we used a combination of a single Tauc-Lorentz oscillator with the Drude free electron model to take in account the free electrons present in the film. The Co doping and addition of H 2 to the gas phase during film growth cause the formation of a titanium oxide which containsfree electrons that absorb the energy of the red part of the spectrum, causing k to increase. The n of the film at 1.5 eV is about 2.3 eV. The fittings also show that the n of films decreases and k increase at the surface. This can be related to a segregation of Co to the surface, which in some cases, of high substrate temperature and high H 2 flow during deposition, can lead to and even higher concentration of free electrons at the surface. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
Notes:
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