Spectroscopic ellipsometry study of amorphous silicon anodically oxidised
- Citation:
- Águas, H., Gonçalves Pereira Silva Fortunato Martins A. L. R. "Spectroscopic ellipsometry study of amorphous silicon anodically oxidised." Thin Solid Films. 427 (2003): 345-349.
Abstract:
In this work, spectroscopic ellipsometry was used to characterise oxide films produced by anodic oxidation of amorphous silicon using an ethylene glycol (0.04 M KNO3) solution. The data obtained show that the growth of the oxide is not only a function of the voltage applied, but also of the current density and of the time process. An empiric model based on a power law is proposed for the growth of the oxide using, as parameters, the voltages and the time process. The oxide produced shows porosity of approximately 12%, which can be reduced down to 6% under well-controlled growth conditions. © 2002 Elsevier Science B.V. All rights reserved.
Notes:
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