@article {{\'A}guas2003345,
	title = {Spectroscopic ellipsometry study of amorphous silicon anodically oxidised},
	journal = {Thin Solid Films},
	volume = {427},
	number = {1-2},
	year = {2003},
	note = {<p>cited By 8</p>
},
	pages = {345-349},
	abstract = {<p>In this work, spectroscopic ellipsometry was used to characterise oxide films produced by anodic oxidation of amorphous silicon using an ethylene glycol (0.04 M KNO3) solution. The data obtained show that the growth of the oxide is not only a function of the voltage applied, but also of the current density and of the time process. An empiric model based on a power law is proposed for the growth of the oxide using, as parameters, the voltages and the time process. The oxide produced shows porosity of approximately 12\%, which can be reduced down to 6\% under well-controlled growth conditions. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.</p>
},
	doi = {10.1016/S0040-6090(02)01220-8},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037416725\&partnerID=40\&md5=6da64e396151535f91290e465055bb6f},
	author = {{\'A}guas, H., Gon{\c c}alves, A., Pereira, L., Silva, R., Fortunato, E., Martins, R.}
}
