Role of the i-layer thickness in the performance of a-Si:H Schottky barrier photodiodes
- Citation:
- Águas, H., Fortunato Pereira Silva Martins E. L. V. "Role of the i-layer thickness in the performance of a-Si:H Schottky barrier photodiodes." Key Engineering Materials. 230-232 (2002): 587-590.
Abstract:
In this work we present the current/voltage characteristics of Si:H/Pd Schottky structures using high quality, low defect density amorphous silicon (a-Si:H) deposited by a non-conventional, modified triode PECVD method. This new configuration allows the deposition of compact and high quality a-Si:H with a photosensitivity of 107, yielding films with low bulk defects. AFM measurements also revealed that these films have a very smooth surface allowing a low defect interface between the metal and the a-Si:H. As a result, we show that by using these a-Si:H films and by proper control of the i-layer thickness the reverse dark current of the diode can be highly reduced achieving signal to noise ratio of 106, surpassing the results usually achieved by p-i-n structures.
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