@article {{\'A}guas2002587,
	title = {Role of the i-layer thickness in the performance of a-Si:H Schottky barrier photodiodes},
	journal = {Key Engineering Materials},
	volume = {230-232},
	year = {2002},
	note = {<p>cited By 0</p>
},
	pages = {587-590},
	abstract = {<p>In this work we present the current/voltage characteristics of Si:H/Pd Schottky structures using high quality, low defect density amorphous silicon (a-Si:H) deposited by a non-conventional, modified triode PECVD method. This new configuration allows the deposition of compact and high quality a-Si:H with a photosensitivity of 107, yielding films with low bulk defects. AFM measurements also revealed that these films have a very smooth surface allowing a low defect interface between the metal and the a-Si:H. As a result, we show that by using these a-Si:H films and by proper control of the i-layer thickness the reverse dark current of the diode can be highly reduced achieving signal to noise ratio of 106, surpassing the results usually achieved by p-i-n structures.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036434959\&partnerID=40\&md5=77ba296f6b2c92661886596f29c42ee0},
	author = {{\'A}guas, H., Fortunato, E., Pereira, L., Silva, V., Martins, R.}
}
