@article {Ferreira1999690,
	title = {Role of the hot wire filament temperature on the structure and morphology of the nanocrystalline silicon p-doped films},
	journal = {Applied Surface Science},
	volume = {144-145},
	year = {1999},
	note = {<p>cited By 7</p>
},
	pages = {690-696},
	abstract = {<p>Nanocrystalline p-doped silicon films were deposited at low substrate temperatures (around 200{\textdegree}C) in a hot wire reactor. In this paper we present the results on the role of the hydrogen dilution and filament temperature on the film{\textquoteright}s structure, composition, morphology and transport properties. The film{\textquoteright}s structure changes from honeycomb-like to a granular needle shape as the filament temperature changes from about 2000{\textdegree}C and hydrogen dilution 87\%, to values above 2100{\textdegree}C and hydrogen dilution 90\%, respectively. The nanocrystalline silicon-based films produced have optical gaps varying from 1.6 to 1.95 eV, with conductivities up to 0.2 S cm-1 and grain sizes (obtained by X-ray diffraction) in the range of 10-30 nm. {\textcopyright} 1999 Elsevier Science B.V. All rights reserved.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032647996\&partnerID=40\&md5=e622ef0150d01c94dafb520ea26ecf09},
	author = {Ferreira, I., {\'A}guas, H., Mendes, L., Martins, R.}
}
