Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering
- Citation:
- Canhola, P.a, Martins Raniero Pereira Fortunato Ferreira Martins N. a L. b. "Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering." Thin Solid Films. 487 (2005): 271-276.
Abstract:
This paper presents the role of the deposition pressure and the rf power density on the optimization of the electrical, optical and structural properties of large area (30×40 cm2) indium-tin oxide films produced by rf magnetron sputtering, with growth rates exceeding 30 nm/min. The films were produced at room temperature under reactive plasma, followed by a thermal annealing in air or formic gas. The best films' uniformity (≤±5%), compactness and surface smoothness (preferential growth orientation along (222)); and electro-optical properties (resistivity and mobility, respectively, of about 7×10-4 Ω cm and 19.6 cm2 V -1 s-1, with transmittance of about 92%) were achieved using a rf power density of 0.92 W cm-2 and a pressure of 8.5×10-2 Pa, followed by its annealing in air by about 2 h at 773 K. © 2005 Elsevier B.V. All rights reserved.
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