@article {Canhola2005271,
	title = {Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering},
	journal = {Thin Solid Films},
	volume = {487},
	number = {1-2},
	year = {2005},
	note = {<p>cited By 36</p>
},
	pages = {271-276},
	abstract = {<p>This paper presents the role of the deposition pressure and the rf power density on the optimization of the electrical, optical and structural properties of large area (30{\texttimes}40 cm2) indium-tin oxide films produced by rf magnetron sputtering, with growth rates exceeding 30 nm/min. The films were produced at room temperature under reactive plasma, followed by a thermal annealing in air or formic gas. The best films{\textquoteright} uniformity (<={\textpm}5\%), compactness and surface smoothness (preferential growth orientation along (222)); and electro-optical properties (resistivity and mobility, respectively, of about 7{\texttimes}10-4 Ω cm and 19.6 cm2 V -1 s-1, with transmittance of about 92\%) were achieved using a rf power density of 0.92 W cm-2 and a pressure of 8.5{\texttimes}10-2 Pa, followed by its annealing in air by about 2 h at 773 K. {\textcopyright} 2005 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2005.01.078},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-22944484060\&partnerID=40\&md5=7dee63dd81343f374728d1fce912d980},
	author = {Canhola, P.a , Martins, N.a , Raniero, L.b , Pereira, S.b , Fortunato, E.c , Ferreira, I.b , Martins, R.b}
}
