@article {Elangovan2009726,
	title = {RF sputtered wide work function indium molybdenum oxide thin films for solar cell applications},
	journal = {Solar Energy},
	volume = {83},
	number = {5},
	year = {2009},
	note = {<p>cited By 20</p>
},
	pages = {726-731},
	abstract = {<p>Indium molybdenum oxide (IMO) thin films were deposited by RF magnetron sputtering on glass substrates at room temperature. The deposition and argon partial pressures were maintained at 6.0 {\texttimes} 10-1 Pa and 3.0 {\texttimes} 10-1 Pa, respectively. The oxygen partial pressure (OPP) was varied in the range 1.0-6.0 {\texttimes} 10-3 Pa. The films were sputtered at 40 W for 30 min using the target consisted In2O3 (98 wt\%): Mo (2 wt\%). The films are polycrystalline with a slight preferential orientation along (2 2 2) plane. The crystallinity is increased with the increasing OPP. The negative sign of Hall coefficient confirmed the n-type conductivity. A maximum mobility \~{}19 cm2 V-1 s-1 is obtained for the films deposited with OPP of 3.6 {\texttimes} 10-3 Pa. The average visible transmittance calculated in the wavelength ranging 500-800 nm is ranging between 2\% and 77\%. The optical band gap calculated from the absorption data is varied between 3.69 and 3.91 eV. A striking feature is that the work function of the films is wide ranging 4.61-4.93 eV. A possibility of using the produced IMO films as transparent conducting oxide in photovoltaic applications such as organic solar cells is discussed in this article. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.</p>
},
	doi = {10.1016/j.solener.2008.11.001},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-63449083309\&partnerID=40\&md5=bf7aba3387a28871b78635b2446de350},
	author = {Elangovan, E., Gon{\c c}alves, G., Martins, R., Fortunato, E.}
}
