RF magnetron sputtering deposition of AZO thin films
- Citation:
- c Chitanu, E.a, Barros Ionita Martins Fortunato R. b G. d. "RF magnetron sputtering deposition of AZO thin films." Metalurgia International. 16 (2011): 32-34.
Abstract:
Doped zinc oxide with aluminium are attractive alternative material as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO) for diffrent applications: solar cells, tft. Transparent aluminumdoped zinc oxide (AZO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature and 100W from ceramic target ZnO-Al2O3 (98:2 weight percent). The structural, electrical and optical properties of these films were characterized as a function of deposition pressure. AZO films with low resistivity 2.02×10-3 Ωcm and high transmittance (over 80% in vizible range) were thus prepared with a deposition pressure of 3 mTorr.
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