@article {Chitanu201132,
	title = {RF magnetron sputtering deposition of AZO thin films},
	journal = {Metalurgia International},
	volume = {16},
	number = {12},
	year = {2011},
	note = {<p>cited By 0</p>
},
	pages = {32-34},
	abstract = {<p>Doped zinc oxide with aluminium are attractive alternative material as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO) for diffrent applications: solar cells, tft. Transparent aluminumdoped zinc oxide (AZO) thin films were deposited on glass substrates by RF magnetron sputtering at room temperature and 100W from ceramic target ZnO-Al2O3 (98:2 weight percent). The structural, electrical and optical properties of these films were characterized as a function of deposition pressure. AZO films with low resistivity 2.02{\texttimes}10-3 Ωcm and high transmittance (over 80\% in vizible range) were thus prepared with a deposition pressure of 3 mTorr.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-80052842437\&partnerID=40\&md5=01056b223ec0593e280d1d29f87d0822},
	author = {Chitanu, E.a , Barros, R.b c , Ionita, G.d , Martins, R.b , Fortunato, E.b}
}
