@article {Ferreira200230,
	title = {The properties of a-Si:H films deposited on Mylar substrates by hot-wire plasma assisted technique},
	journal = {Journal of Non-Crystalline Solids},
	volume = {299-302},
	year = {2002},
	note = {<p>cited By 0</p>
},
	pages = {30-35},
	abstract = {<p>In this work we studied the influence of hydrogen dilution, rf power, and the filament and substrate temperatures on the electro-optical properties and composition of a-Si:H films produced by hot wire plasma assisted technique. The a-Si:H films were produced on Mylar substrates with growth rate of up to 37 {\r A}/s, ημτ product of 1.6 {\texttimes} 10-7 cm2/V, photoconductivity to dark conductivity ratio of 1 {\texttimes} 104 (at AM1.5 radiation), and a dark conductivity of about 10-10 (Ω cm)-1 for substrate temperature of 130 {\textdegree}C, hydrogen dilution of 99\%, filament temperature of 1700 {\textdegree}C, and rf power of 100 W. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.</p>
},
	doi = {10.1016/S0022-3093(01)01173-5},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036539809\&partnerID=40\&md5=d0767068690d5cab263243218012216d},
	author = {Ferreira, I.a , Fortunato, E.a , Pereira, L.a , Costa, M.E.V.b , Martins, R.a}
}
