@article {Wang20111490,
	title = {Properties of P-doped ZnO films RF-sputtered at different substrate temperature},
	journal = {Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering},
	volume = {40},
	number = {8},
	year = {2011},
	note = {<p>cited By 3</p>
},
	pages = {1490-1494},
	abstract = {<p>In order to study the properties of P-doped ZnO films deposited at low temperature substrates, P-doped ZnO films were RF-sputtered on sapphire substrates in the range from RT to 350{\textdegree}C. XRD spectra indicated the growth of the crystallites along the strongest \&lt;001\&gt; orientation. Further ZnO (002) peak became the weakest when the film was sputtered at 250{\textdegree}C. AFM pictures showed that the surface morphology varied with the deposition temperature. The sample RMS increased with the increase of substrate temperature. XPS spectra showed a clear broad P 2p peak at about 134 eV. Further the film composition varied with the substrate temperature. The average visible transmittance calculated in the wavelength ranging 400-600 nm was more than 60\%. The optical band gap calculated from the absorption coefficient was about 3.2 eV. The Hall measurements confirm the n-type conductivity of the films. The carrier concentration in the films decreases with the increase of substrate temperature. The study is helpful for understanding the properties of P-doped ZnO films sputtered at lower substrate temperature and achieving p type ZnO films at lower temperature.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-80053999007\&partnerID=40\&md5=00efb945feb37c4064548bff3e9bc1c8},
	author = {Wang, J.a b , Li, M.a , Sallet, V.c , Rego, A.d , Martins, R.b , Fortunato, E.b}
}
