@article {Pimentel2005212,
	title = {Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices},
	journal = {Thin Solid Films},
	volume = {487},
	number = {1-2},
	year = {2005},
	note = {<p>cited By 32</p>
},
	pages = {212-215},
	abstract = {<p>In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5{\texttimes}108 Ω cm with an optical transmittance of 90\%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface. {\textcopyright} 2005 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2005.01.067},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-22944488292\&partnerID=40\&md5=34e25c8b4384c98e8a29038e4ac3d405},
	author = {Pimentel, A., Fortunato, E., Gon{\c c}alves, A., Marques, A., {\'A}guas, H., Pereira, L., Ferreira, I., Martins, R.}
}
