@conference {Ferreira1999607,
	title = {Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {507},
	year = {1999},
	note = {<p>cited By 2</p>
},
	pages = {607-612},
	abstract = {<p>This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film{\textquoteright}s structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4 mWcm-2) and with filament temperatures around 1850 {\textdegree}K have dark conductivities below 10-10 Scm-1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM1.5), with almost no traces of oxygen content. N-doped silicon films were also fabricated under the same conditions which attained conductivities of about 10-2 Scm-1.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032625047\&partnerID=40\&md5=3dca575a96ef9aaf9eb3d0996369d61c},
	author = {Ferreira, I., Aguas, H., Mendes, L., Fernandes, F., Fortunato, E., Martins, R.}
}
