Rodrigo Martins

Citation:

b b b b b Figueiredo, V.a b, Pinto Deuermeier Barros Alves Martins Fortunato J. V. a J. "P-Type CuxO thin-film transistors produced by thermal oxidation." IEEE/OSA Journal of Display Technology. 9 (2013): 735-740.

Abstract:

Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150-450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 C and its conversion to CuO starts at 250 C. For lower thicknesses 40 nm, the films oxidized at 250 C showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively. © 2005-2012 IEEE.

Notes:

cited By 9

Related External Link