@article {Figueiredo2013735,
	title = {P-Type CuxO thin-film transistors produced by thermal oxidation},
	journal = {IEEE/OSA Journal of Display Technology},
	volume = {9},
	number = {9},
	year = {2013},
	note = {<p>cited By 9</p>
},
	pages = {735-740},
	abstract = {<p>Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150-450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 C and its conversion to CuO starts at 250 C. For lower thicknesses 40 nm, the films oxidized at 250 C showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively. {\textcopyright} 2005-2012 IEEE.</p>
},
	doi = {10.1109/JDT.2013.2247025},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84884285102\&partnerID=40\&md5=b1c9d891450c1d2de998cc8ac0b0c7c2},
	author = {Figueiredo, V.a b , Pinto, J.V.a b , Deuermeier, J.a b , Barros, R.a b , Alves, E.c , Martins, R.a b , Fortunato, E.a b}
}
