P-Type Cu x films deposited at room temperature for thin-film transistors

Citation:
b Figueiredo, V.a, Elangovan Barros Pinto Busani Martins Fortunato E. a R. a. "P-Type Cu x films deposited at room temperature for thin-film transistors." IEEE/OSA Journal of Display Technology. 8 (2012): 41-47.

Abstract:

Thin-films of copper oxide Cu x were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure. A metallic Cu film with cubic structure obtained from 0% O PP has been transformed to cubic Cu x phase for the increase in O PP to 9% but then changed to monoclinic CuO phase (for. The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu x films produced with O PP ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors. © 2006 IEEE.

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