@article {Figueiredo201241,
	title = {P-Type Cu x films deposited at room temperature for thin-film transistors},
	journal = {IEEE/OSA Journal of Display Technology},
	volume = {8},
	number = {1},
	year = {2012},
	note = {<p>cited By 14</p>
},
	pages = {41-47},
	abstract = {<p>Thin-films of copper oxide Cu x were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure. A metallic Cu film with cubic structure obtained from 0\% O PP has been transformed to cubic Cu x phase for the increase in O PP to 9\% but then changed to monoclinic CuO phase (for. The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu x films produced with O PP ranging between 9\% and 75\% showed p-type behavior, which were successfully applied to produce thin-film transistors. {\textcopyright} 2006 IEEE.</p>
},
	doi = {10.1109/JDT.2011.2170153},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84855429944\&partnerID=40\&md5=29ebce203d7e077623825f441f580505},
	author = {Figueiredo, V.a , Elangovan, E.a , Barros, R.a b , Pinto, J.V.a , Busani, T.a , Martins, R.a , Fortunato, E.a}
}
