P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs
- Citation:
- Barquinha, P., Pereira Gonçalves Martins Fortunato L. G. R. "P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs." Digest of Technical Papers - SID International Symposium. Vol. 41 1. 2010. 1376-1379.
Abstract:
Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔV T<0.5 V after 24h of I D=10 μA stress, quite promising for integration in electronic circuits. © 2010 SID.
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