@conference {Barquinha20101376,
	title = {P-202L: Late-news poster: Long-term stability of oxide semiconductor-based TFTs},
	booktitle = {Digest of Technical Papers - SID International Symposium},
	volume = {41 1},
	year = {2010},
	note = {<p>cited By 0</p>
},
	pages = {1376-1379},
	abstract = {<p>Long-term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO-based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔV T\&lt;0.5 V after 24h of I D=10 μA stress, quite promising for integration in electronic circuits. {\textcopyright} 2010 SID.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863326353\&partnerID=40\&md5=29238e46ffc3f48e589b24444503e076},
	author = {Barquinha, P., Pereira, L., Gon{\c c}alves, G., Martins, R., Fortunato, E.}
}
