Rodrigo Martins

Citation:

Fortunato, E., Pereira Barquinha Ferreira Prabakaran Gonçalves Gonçalves Martins L. P. I. "Oxide semiconductors: Order within the disorder." Philosophical Magazine. 89 (2009): 2741-2758.

Abstract:

The effect is considered of order and disorder on the electrical and optical performance of ionic oxide semiconductors used to produce optoelectronic devices such as p-n heterojunction solar cells and thin-film transistors (TFTs). The results obtained show that p-type c-Si/a-IZO/poly-ZGO solar cells exhibit efficiencies above 14% in device areas of about 2.34 cm2, whereas amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance to the polycrystalline ZnO TFTs, with ION/I OFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2 V-1 s-1. In addition, preliminary data on a p-type oxide TFT based on the Zn-Cu-O system are presented. © 2009 Taylor & Francis.

Notes:

cited By 23

Related External Link