@article {Fortunato20092741,
	title = {Oxide semiconductors: Order within the disorder},
	journal = {Philosophical Magazine},
	volume = {89},
	number = {28-30},
	year = {2009},
	note = {<p>cited By 23</p>
},
	pages = {2741-2758},
	abstract = {<p>The effect is considered of order and disorder on the electrical and optical performance of ionic oxide semiconductors used to produce optoelectronic devices such as p-n heterojunction solar cells and thin-film transistors (TFTs). The results obtained show that p-type c-Si/a-IZO/poly-ZGO solar cells exhibit efficiencies above 14\% in device areas of about 2.34 cm2, whereas amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance to the polycrystalline ZnO TFTs, with ION/I OFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2 V-1 s-1. In addition, preliminary data on a p-type oxide TFT based on the Zn-Cu-O system are presented. {\textcopyright} 2009 Taylor \&amp; Francis.</p>
},
	doi = {10.1080/14786430903022671},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-76849098010\&partnerID=40\&md5=9a8234a50a604e699e9326c04e7434ec},
	author = {Fortunato, E., Pereira, L., Barquinha, P., Ferreira, I., Prabakaran, R., Gon{\c c}alves, G., Gon{\c c}alves, A., Martins, R.}
}
