Optical and microstructural investigations of porous silicon coated with a-Si:H using PECVD technique
- Citation:
- Prabakaran, R., Aguas Pereira Elangovan Fortunato Martins Ferreira H. L. E. "Optical and microstructural investigations of porous silicon coated with a-Si:H using PECVD technique." Materials Science Forum. 587-588 (2008): 308-312.
Abstract:
In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals me enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating.
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