@article {Prabakaran2008308,
	title = {Optical and microstructural investigations of porous silicon coated with a-Si:H using PECVD technique},
	journal = {Materials Science Forum},
	volume = {587-588},
	year = {2008},
	note = {<p>cited By 0</p>
},
	pages = {308-312},
	abstract = {<p>In the present work, the spectroscopic ellipsometry (1.5 - 5.5 eV) was used to investigate the effects of current density induced microstructural variations and their influence on the electronic states of as-prepared and a-Si:H coated porous silicon (PS). The pseudodielectric responses of the low and high current densities (5 and 40 mA/cm2) were analyzed using a multilayer model within the effective medium approximation. The FTIR investigation reveals me enhancement of surface oxide (Si-Ox) layer with current density and the improvement of the Si-Hx band after a-Si:H coating.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-60349088150\&partnerID=40\&md5=8b9a9ae7a8f49e0d3dc2a62f225a1dc8},
	author = {Prabakaran, R., Aguas, H., Pereira, L., Elangovan, E., Fortunato, E., Martins, R., Ferreira, I.}
}
