Next generation of thin film transistors based on zinc oxide

Next generation of thin film transistors based on zinc oxide

Citation:: Fortunato, E., Barquinha Pimentel Gonçalves Pereira Marques Martins P. A. A. "Next generation of thin film transistors based on zinc oxide." Materials Research Society Symposium Proceedings. Vol. 811. 2004. 347-352.

Abstract:

We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Notes:

cited By 0

Rodrigo Martins

Professor @ Materials Science Department