@conference {Fortunato2004347,
	title = {Next generation of thin film transistors based on zinc oxide},
	booktitle = {Materials Research Society Symposium Proceedings},
	volume = {811},
	year = {2004},
	note = {<p>cited By 0</p>
},
	pages = {347-352},
	abstract = {<p>We report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3{\texttimes}105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80\% in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-12744271549\&partnerID=40\&md5=00afac3b696404f2cf56fb72aeb02b69},
	author = {Fortunato, E., Barquinha, P., Pimentel, A., Gon{\c c}alves, A., Pereira, L., Marques, A., Martins, R.}
}
