@article {Assun{\c c}{\~a}o2003102,
	title = {New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering},
	journal = {Thin Solid Films},
	volume = {442},
	number = {1-2},
	year = {2003},
	note = {<p>cited By 71</p>
},
	pages = {102-106},
	abstract = {<p>Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2. 7 {\texttimes} 10-4 Ω cm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3 {\texttimes} 1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85\%, on average. {\textcopyright} 2003 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/S0040-6090(03)00955-6},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0141525129\&partnerID=40\&md5=70f6a050320b65f5868947c120b7f6ab},
	author = {Assun{\c c}{\~a}o, V., Fortunato, E., Marques, A., Gon{\c c}alves, A., Ferreira, I., {\'A}guas, H., Martins, R.}
}
