Nanostructured silicon based thin film transistors processed in the plasma dark region
- Citation:
- Pereira, L., Águas Gomes Barquinha Fortunato Martins H. L. P. "Nanostructured silicon based thin film transistors processed in the plasma dark region." Journal of Nanoscience and Nanotechnology. 10 (2010): 2938-2943.
Abstract:
Nanostructured silicon (na-Si:H) thin films were fabricated using plasma enhanced chemical vapour deposition (PECVD) technique under high silane hydrogen dilution and a discharge frequency of 27 MHz, where the substrate was located in the dark region of the plasma, protected by a grounded metal grid. By not exposing the growth surface directly to the plasma we avoid the silicon growth surface to sustain a high ion bombardment leading to a less defective surface and highly compact films. The intrinsic films grown under these conditions were used to produce the channel region of thin film transistors (TFTs) with a bottom gate staggered configuration, integrating different dielectric layers. The devices produced exhibit a field effect mobility close to 1.84 cm 2 V -1S -1, threshold voltage around 2 V, on/off ratio above 10 7 and sub-threshold slope below 0.5 V/decade, depending on the dielectric used. Copyright © 2010 American Scientific Publishers All rights reserved.
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