@article {Pereira20102938,
	title = {Nanostructured silicon based thin film transistors processed in the plasma dark region},
	journal = {Journal of Nanoscience and Nanotechnology},
	volume = {10},
	number = {4},
	year = {2010},
	note = {<p>cited By 1</p>
},
	pages = {2938-2943},
	abstract = {<p>Nanostructured silicon (na-Si:H) thin films were fabricated using plasma enhanced chemical vapour deposition (PECVD) technique under high silane hydrogen dilution and a discharge frequency of 27 MHz, where the substrate was located in the dark region of the plasma, protected by a grounded metal grid. By not exposing the growth surface directly to the plasma we avoid the silicon growth surface to sustain a high ion bombardment leading to a less defective surface and highly compact films. The intrinsic films grown under these conditions were used to produce the channel region of thin film transistors (TFTs) with a bottom gate staggered configuration, integrating different dielectric layers. The devices produced exhibit a field effect mobility close to 1.84 cm 2 V -1S -1, threshold voltage around 2 V, on/off ratio above 10 7 and sub-threshold slope below 0.5 V/decade, depending on the dielectric used. Copyright {\textcopyright} 2010 American Scientific Publishers All rights reserved.</p>
},
	doi = {10.1166/jnn.2010.1443},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954960967\&partnerID=40\&md5=3ca91c961d774ffa0f5ccf6c883e790a},
	author = {Pereira, L., {\'A}guas, H., Gomes, L., Barquinha, P., Fortunato, E., Martins, R.}
}
