@article {Martins20092699,
	title = {Nanostructured silicon and its application to solar cells, position sensors and thin film transistors},
	journal = {Philosophical Magazine},
	volume = {89},
	number = {28-30},
	year = {2009},
	note = {<p>cited By 37</p>
},
	pages = {2699-2721},
	abstract = {<p>This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9\%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 90 l p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm 2/V/s, threshold voltage of 2 V, on/off ratio larger than 10 7 and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device. {\textcopyright} 2009 Taylor \&amp; Francis.</p>
},
	doi = {10.1080/14786430902886910},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-73649119731\&partnerID=40\&md5=aa36e8f33e0cb7f0f2a553f76e5bd78f},
	author = {Martins, R.a , Raniero, L.b , Pereira, L.a , Costa, D.a c , Aguas, H.a , Pereira, S.a , Silva, L.a , Goncalves, A.a , Ferreira,}
}
