@conference {Ferreira2000,
	title = {N-type silicon films produced by hot wire technique},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {609},
	year = {2000},
	note = {<p>cited By 0</p>
},
	pages = {A651-A656},
	abstract = {<p>The role of the deposition pressure (p) and the type of filaments (tungsten, W or tantalum, Ta) used to produce large area (10cm{\texttimes}10cm) n-type Si:H films by hot wire chemical vapour (HW-CVD) deposition technique was investigated. The data show that the electro-optical properties of the films produced are dependent on the gas pressure used. In the pressure range of 1{\texttimes}10-3 Torr to 1.0 Torr, the room dark conductivity (σd) varies from 1{\texttimes}10-8 to 2 S/cm for films produced at the same hydrogen dilution and filament temperature (Tfil). On the other hand, the hydrogen concentration (CH) decreases from 10\% to 2\%, while the growth rate (R) shows an exponential increase, from 1 to 9 {\r A}/s. The SIMS analysis, within the detection limits, does not reveal the existence of any significant W or Ta contamination in the films produced.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034429670\&partnerID=40\&md5=91ced8d08893bd26cc0f7f1458ce1bc5},
	author = {Ferreira, I.M.M., Cabrita, A.M.F., Fortunato, E.M.C., Martins, R.F.P.}
}
