@conference {Fantoni1994711,
	title = {Modelling heteroface of P.I.N solar cells for improving stability},
	booktitle = {Materials Research Society Symposium Proceedings},
	volume = {336},
	year = {1994},
	note = {<p>cited By 13</p>
},
	pages = {711-716},
	abstract = {<p>The introduction into a traditional p.i.n structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer ("i'-layer"), grown at a higher power density, present a high density of defects and acts as "gettering centers" able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyse the influence of the "i'-layer" position, thickness and density of states on the a-Si: H solar cells performances. Results of some systematic simulation from the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented. {\textcopyright} 1994 Materials Research Society.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84897584858\&partnerID=40\&md5=2a28d4345b354bb4e8ebae7a8195059d},
	author = {Fantoni, A., Vieira, M., Martins, R.}
}
