@article {Martins1998144,
	title = {Investigation of the amorphous to microcrystalline phase transition of thin film silicon produced by PECVD},
	journal = {Thin Solid Films},
	volume = {317},
	number = {1-2},
	year = {1998},
	note = {<p>cited By 9</p>
},
	pages = {144-148},
	abstract = {<p>We have deposited by Plasma Enhanced Chemical Vapour Deposition phosphorus doped amorphous and microcrystalline silicon films, as a function of the RF power (10-300 W), using a PH3/(SiH4 + H2 + He)mixture. It was found that films microcrystallization occurs for powers above 130 W, where a clear phase transition occurs. The microcrystalline films produced present high dark conductivities and optical band gaps, where the crystalline volume fraction is above 25\%, as revealed by micro Raman spectroscopy. The Hall mobility have been also determined for amorphous and microcrystalline films, as a function of temperature, in the range 280-340 K. The data show that for the microcrystalline films the conduction is mainly in the extended states of the microcrystals, confirming also the double sign anomaly. That is, for n-type films, the sign is positive for the amorphous case while it is negative for the microcrystalline case. {\textcopyright} 1998 Elsevier Science S.A.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032048851\&partnerID=40\&md5=560bdeecd60a2fe9ddb0c139457ce7e4},
	author = {Martins, R.a b , Ma{\c c}arico, A.a b , Ferreira, I.a b , Nunes, R.a b , Bicho, A.a b , Fortunato, E.a b}
}
