Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering
- Citation:
- do Wang, J.a, Sallet Jomard Botelho Rego Elamurugu Martins Fortunato V. b F. b. "Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering." Thin Solid Films. 515 (2007): 8785-8788.
Abstract:
Nitrogen-doped ZnO films were deposited by RF magnetron sputtering in 75% of N2 / (Ar + N2) gas atmosphere. The influence of substrate temperature ranging from room temperature (RT) to 300 °C was analyzed by X-ray diffractometry (XRD), spectrophotometry, X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS) and Hall measurements setup. The XRD studies confirmed the hexagonal ZnO structure and showed that the crystallinity of these films increased with increasing substrate temperature (Ts). The optical studies indicate the average visible transmittance in the wavelength ranging 500-800 nm increases with increasing Ts. A minimum transmittance (9.84%) obtained for the films deposited at RT increased with increasing Ts to a maximum of 88.59% at 300 °C (500-800 nm). Furthermore, it was understood that the band gap widens with increasing Ts from 1.99 eV (RT) to 3.30 eV (250 °C). Compositional analyses (XPS and SIMS) confirmed the nitrogen (N) incorporation into the ZnO films and its decreasing concentration with increasing Ts. The negative sign of Hall coefficients confirmed the n-type conducting. © 2007 Elsevier B.V. All rights reserved.
Notes:
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