@article {Wang20078785,
	title = {Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering},
	journal = {Thin Solid Films},
	volume = {515},
	number = {24 SPEC. ISS.},
	year = {2007},
	note = {<p>cited By 24</p>
},
	pages = {8785-8788},
	abstract = {<p>Nitrogen-doped ZnO films were deposited by RF magnetron sputtering in 75\% of N2 / (Ar + N2) gas atmosphere. The influence of substrate temperature ranging from room temperature (RT) to 300~{\textdegree}C was analyzed by X-ray diffractometry (XRD), spectrophotometry, X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectrometry (SIMS) and Hall measurements setup. The XRD studies confirmed the hexagonal ZnO structure and showed that the crystallinity of these films increased with increasing substrate temperature (Ts). The optical studies indicate the average visible transmittance in the wavelength ranging 500-800~nm increases with increasing Ts. A minimum transmittance (9.84\%) obtained for the films deposited at RT increased with increasing Ts to a maximum of 88.59\% at 300~{\textdegree}C (500-800~nm). Furthermore, it was understood that the band gap widens with increasing Ts from 1.99~eV (RT) to 3.30~eV (250~{\textdegree}C). Compositional analyses (XPS and SIMS) confirmed the nitrogen (N) incorporation into the ZnO films and its decreasing concentration with increasing Ts. The negative sign of Hall coefficients confirmed the n-type conducting. {\textcopyright} 2007 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2007.03.061},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548840549\&partnerID=40\&md5=3215ee9c0dff23875eaa9f3bb4d674cb},
	author = {Wang, J.a , Sallet, V.b , Jomard, F.b , Botelho do Rego, A.M.c , Elamurugu, E.a , Martins, R.a , Fortunato, E.a}
}
