@article {Nedev2004108,
	title = {Influence of the rapid thermal annealing on the properties of thin a-Si films},
	journal = {Materials Science Forum},
	volume = {455-456},
	year = {2004},
	note = {<p>cited By 0</p>
},
	pages = {108-111},
	abstract = {<p>The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200{\textdegree}C for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-3142658011\&partnerID=40\&md5=a51bb9a36b0e33a7e17d6cdc2ea5c9e1},
	author = {Nedev, N.a b , Beshkov, G.a , Fortunato, E.b , Georgiev, S.S.a b , Ivanov, T.a , Raniero, L.b , Zhang, S.b c , Martins, R.b}
}
