@article {Fantoni2002151,
	title = {Influence of the intrinsic layer characteristics on a-Si:H p-i-n solar cell performance analysed by means of a computer simulation},
	journal = {Solar Energy Materials and Solar Cells},
	volume = {73},
	number = {2},
	year = {2002},
	note = {<p>cited By 20</p>
},
	pages = {151-162},
	abstract = {<p>In this paper a set of one-dimensional simulations of a-Si:H p-i-n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift-diffusion and the generation-recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.</p>
},
	doi = {10.1016/S0927-0248(01)00120-9},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036605126\&partnerID=40\&md5=a4be0908ef11a190a7bc219046e9412f},
	author = {Fantoni, A.a b , Viera, M.a , Martins, R.b}
}
