Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
- Citation:
- c Kiazadeh, A.a b, Gomes Barquinha Martins Rovisco Pinto Martins Fortunato H. L. b P. "Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors." Applied Physics Letters. 109 (2016).
Abstract:
The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons. © 2016 Author(s).
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