@article {Kiazadeh2016,
	title = {Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors},
	journal = {Applied Physics Letters},
	volume = {109},
	number = {5},
	year = {2016},
	note = {<p>cited By 0</p>
},
	abstract = {<p>The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75\%, and the light induced instability is reduced by 35\%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons. {\textcopyright} 2016 Author(s).</p>
},
	doi = {10.1063/1.4960200},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84981155175\&partnerID=40\&md5=ab02bba3454e040f574ba707d0f5408e},
	author = {Kiazadeh, A.a b , Gomes, H.L.b c , Barquinha, P.a , Martins, J.a , Rovisco, A.a , Pinto, J.V.a , Martins, R.a , Fortunato, E.a}
}
