@conference {deCarvalho199625,
	title = {Improvement of the ITO-P interface in a-Si:H solar cells using a thin SiO intermediate layer},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {426},
	year = {1996},
	note = {<p>cited By 0</p>
},
	pages = {25-29},
	abstract = {<p>The use of ITO films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030380927\&partnerID=40\&md5=e78c732740cf51a4a3acd6773ef1ac4d},
	author = {de Carvalho, C.Nunes, de Nijs, J.M.M., Ferreira, I., Fortunato, E., Martins, R.}
}
